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John KennedyPrincipal Scientist - Materials

Kennedy John 3098



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Dr. John V Kennedy is a material scientist whose work focusses on new materials development for low carbon energy technologies. His research explores new technological pathways for a sustainable zero carbon economy. He uses ion beam technologies pioneered by Lord Rutherford to develop functional materials and to provide key information about the materials structure-property relationship. The results are used across the materials science community for the design of a new product, surface engineering, catalytic materials for hydrogen production and storage, thermoelectric materials for waste heat to energy conversion, energy storage materials, magnetic materials and energy efficient systems. John is an Adjunct Professor at Victoria University of Wellington. He is the programme director for MBIE advanced Energy technology platform “Green Hydrogen Technology Platform” which aims to develop new clean technologies to produce hydrogen from non-pure water and develop a technological capability for Hydrogen in New Zealand. He is also Energy & Emissions platform leader of New Zealand Product Accelerator and Principal Investigator of the MacDiarmid Institute for Advanced Materials and Nanotechnology and Principal Investigator of the MBIE Endeavour funded Programme “Wirelessly Powered Transport Infrastructure for a Low-carbon Future”


  • MSc, Physics
  • BSc, Physics
  • PhD, Physics

Areas of expertise

  • Nuclear Physics: Ion implantation
  • Nanotechnology: Metal oxide
  • Engineering: Energy storage
  • Engineering: Hydrogen
  • Engineering: Materials Engineering

Major Publications

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  • Murmu, P.P.; Kennedy, J.V.; Liu, Z.; Mori, T. 2022. The role of sulfur valency on thermoelectric properties of sulfur ion implanted copper iodide, Journal of Alloys and Compounds 921: article 166103. DOI: 10.1016/j.jallcom.2022.166103. article 166103
  • Fiedler, H.; Fuchs, F.; Leveneur, J.; Nancarrow, M.; Mitchell, D.R.G.; Schuster, J.; Kennedy, J.V. 2021. Giant piezoelectricity of deformed aluminum nitride stabilized through noble gas interstitials for energy efficient resonators, Advanced Electronic Materials 7(8): article 2100358. DOI: 10.1002/aelm.202100358. article 2100358
  • Jovic, V.; Moser, S.; Papadogianni, A.; Koch, R.J.; Rossi, A.; Jozwiak, C.; Bostwick, A.; Rotenberg, E.; Kennedy, J.V.; Bierwagen, O.; Smith, K.E. 2020. The itinerant 2D electron gas of the indium oxide (111) surface : implications for carbon- and energy-conversion applications, Small 16(12): 1903321. DOI: 10.1002/smll.201903321. 1903321
  • Murmu, P.P.; Kennedy, J.V.; Suman, S.; Chong, S.V.; Leveneur, J.; Storey, J.; Rubanov, S.; Ramanath, G. 2019. Multifold improvement of thermoelectric power factor by tuning bismuth and antimony in nanostructured n-type bismuth antimony telluride thin films, Materials & Design 163: article 107549. DOI: 10.1016/j.matdes.2018.107549. article 107549
  • Ahmed, S.; Ding, X.; Bao, N.; Bian, P.; Zheng, R.; Wang, Y.; Murmu, P.P.; Kennedy, J.V.; Liu, R.; Fan, H.; Suzuki, K.; Ding, J.; Yi, J. 2017. Inducing high coercivity in MoS2 nanosheets by transition element doping, Chemistry of Materials 29(21): p. 9066-9074. DOI: 10.1021/acs.chemmater.7b02593. p. 9066-9074
  • Kennedy, J.V.; Murmu, P.P.; Leveneur, J.V.; Markwitz, A.; Futter, R.J. 2016. Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment, Applied Surface Science 367: p. 52-58. DOI: 10.1016/j.apsusc.2016.01.160. p. 52-58
  • Nandasiri, M.I.; Shutthanandan, V.; Manandhar, S.; Schwarz, A.M.; Oxenford, L.; Kennedy, J.V.; Thevuthasan, S.; Henderson, M.A. 2015. Instability of hydrogenated TiO2, Journal of Physical Chemistry Letters 6(22): p. 4627-4632. DOI: 10.1021/acs.jpclett.5b02219. p. 4627-4632
  • Kennedy, J.V.; Williams, G.V.M.; Murmu, P.P.; Ruck, B.J. 2013. Intrinsic magnetic order and inhomogeneous transport in Gd-implanted zinc oxide, Physical review. B 88(21): article 214423. DOI: 10.1103/PhysRevB.88.214423. article 214423
  • Kennedy, J.V.; Leveneur, J.; Williams, G.V.M.; Mitchell, D.R.G.; Markwitz, A. 2011. Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing, Nanotechnology 22: article 115602. DOI: 10.1088/0957-4484/22/11/115602. article 115602
  • Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2009. UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method, Nanotechnology 20(24): Paper 245502. DOI: 10.1088/0957-4484/20/24/245502. Paper 245502
  • Ruck, B.J.; Koo, A.; Lanke, U.D.; Budde, F.; Granville, S.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; Kennedy, J.V.; Markwitz, A. 2004. Quantitative study of molecular N2 trapped in disordered GaN:O films, Physical review. B 70(23): 5 p.. Institute of Geological & Nuclear Sciences contribution 3303 5 p.

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