Thin Film Deposition

thin film deposition

Performed using an Ion-beam Sputter System

  • ~10 nm to 100s of nm thickness
  • Sputtering beam: 10-20 keV Ar
  • Beam spot diameter on target: 1-2 mm
  • Target materials used so far: Si (n and p-type), Ge (n and p-type), SiGe, ZnO, SiN, Au, Ag, Pt, Sn, Al, Ni, Ti, Cr and In2O3Sn
  • Ambient temperature deposition – use of low melting point substrates is possible
  • High vacuum during sputtering process
  • Deposited material is usually in the amorphous form.
  • Substrate heater up to 450 C
  • Substrate size up to 100 x 50 mm
  • Simultaneous deposition onto 20 substrates (size 10 x 10 mm)
  • NEW: proton beam annealing with high current ion beam. 900 C on target.