Ion Implantation

Low energy ion implantation facility for doping and surface modification.

Low energy ion implantation facility for doping and surface modification.

We provide Ion Beam implantation services for researchers using single, interlinked (2 different ion species simultaneously) or in-situ ion implanters (combined ion implantation, RBS and electron beam annealing).

We have specialised equipment to ion implant any solid material with elements and isotopes with experimental- and industrial-scale equipment available. Temperature range: -150 C to 1200 C.

We provided verification using ion beam analysis.

Elements ion implanted (filled squares) at the GNS Science ion implanter facility since 2000.

Ion Energy: 5-100 keV

Implantation Area: Typically 10mm

Ion Species:All major elements eg. H, He, C, N, O, Fe, Ne, Na, Mg, Si, P, S, Ar, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Ba, Ta.

Applications: Nanoscience, advanced materials and polymers.

Project Example: