High-accuracy elemental analysis (hydrogen to uranium) of materials and surfaces from a wide range of sample types.

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Atomic force Microscopy
Atomic Force Microscopy

- Used to determine the topography of nanoscale surfaces to 14 µm depth.
- Contact mode.

Scanning electron Microscopy
Scanning Electron Microscopy

- Can image features <1 µm
- Multiple sample holder (no tilting) or single sample with tilting capability
- SEM Au deposition unit

Field Emission test system
Field Emission Test System

- High vacuum chamber for measuring the field emission (electronic properties) of advanced materials
- Computer controlled data acquisition

Hall effect
Hall Effect

- Four point Hall probe measurement system for measuring the resistivity, carrier concentration, and mobility of semiconductors.
- Up to 20 mm x 20 mm samples
- All semiconductors (n-type & p-type) including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN