John Kennedy

 

Full Name: John Kennedy

Position: Ion Beam Physics Research Scientist

Contact details

Email me here
Phone: +64-4-570 4771

Qualifications

1990: BSc (A), Physics; 1993: MSc (A), Physics; 1999: PhD (A), Physics

Areas of expertise

Business Development: Team Leadership and Project Management
Engineering: Engineering Electronics
Engineering: Materials Engineering
Engineering: Nanotechnology
Nanotechnology: Carbon nanotubes
Nanotechnology: Metal oxide
Nanotechnology: Nanomagnetism
Nanotechnology: nano sensors
Nanotechnology: nanoclusters
Nanotechnology: surface coatings
Nuclear Physics: Advanced materials
Nuclear Physics: Air particulates
Nuclear Physics: Ion Beam Analysis
Nuclear Physics: Ion implantation
Nuclear Physics: Material science
Nuclear Physics: Nanostructures
Nuclear Physics: New materials development
Nuclear Physics: Nuclear Microprobe studies
Nuclear Physics: Semiconductor physics
Nuclear Physics: Trace elements

Professional activities

McDiarmid Institute for Advance Materials and Nanotechnology: Associate Investigator
Royal Society of New Zealand: Physical sciences: Member
NZIP: member
NZ Association of Scientists: member
Material Research Society (MRS): Member
Material Research Society of New Zealand: Founding member
Microscopy New Zealand: Member
Australian Research Council Nanotechnology Network: Member
Light Alloy Manufacturing of New Zealand: member

Major publications

Jovic, V.; Moser, S.; Papadogianni, A.; Koch, R.J.; Rossi, A.; Jozwiak, C.; Bostwick, A.; Rotenberg, E.; Kennedy, J.V.; Bierwagen, O.; Smith, K.E. 2020 The itinerant 2D electron gas of the indium oxide (111) surface : implications for carbon- and energy-conversion applications. Small, 16(12): 1903321; doi: 10.1002/smll.201903321

Loho, T.; Leveneur, J.; Davidson, R.; Trompetter, M.; Futter, R.J.; Morel, J.; Archer, R.; Kennedy, J.V. 2020 A tensile technique for measuring frozen products adhesion strength : application to stainless steel/frozen milk interaction. Journal of food engineering, 271: article 109772; doi: 10.1016/j.jfoodeng.2019.109772

Murmu, P.P.; Chong, S.V.; Storey, J.; Rubanov, S.; Kennedy, J.V. 2019 Secondary phase induced electrical conductivity and improvement in thermoelectric power factor of zinc antimonide films. Materials Today Energy, 13: 249-255; doi: 10.1016/j.mtener.2019.06.001

Murmu, P.P.; Kennedy, J.V.; Suman, S.; Chong, S.V.; Leveneur, J.; Storey, J.; Rubanov, S.; Ramanath, G. 2019 Multifold improvement of thermoelectric power factor by tuning bismuth and antimony in nanostructured n-type bismuth antimony telluride thin films. Materials & Design, 163: article 107549; doi: 10.1016/j.matdes.2018.107549

Ahmed, S.; Ding, X.; Bao, N.; Bian, P.; Zheng, R.; Wang, Y.; Murmu, P.P.; Kennedy, J.V.; Liu, R.; Fan, H.; Suzuki, K.; Ding, J.; Yi, J. 2017 Inducing high coercivity in MoS2 nanosheets by transition element doping. Chemistry of Materials, 29(21): 9066-9074; doi: 10.1021/acs.chemmater.7b02593

Kennedy, J.V.; Fang, F.; Futter, R.J.; Leveneur, J.; Murmu, P.P.; Panin, G.N.; Kang, T.W.; Manikandan, E. 2017 Synthesis and enhanced field emission of zinc oxide incorporated carbon nanotubes. Diamond and related materials, 71: 79-84; doi: 10.1016/j.diamond.2016.12.007

Li, Y.; Ng, G.I.; Arulkumaran, S.; Liu, Z.H.; Ranjan, K.; Ang, K.S.; Murmu, P.P.; Kennedy, J.V. 2017 Improved planar device isolation in AlGaN/GaN HEMTs on Si by ultra-heavy 131Xe+ implantation. Physica Status Solidi. A, Applications and Materials Science, 214(8): 1600794; doi: 10.1002/pssa.201600794

Kaviyarasu, K.; Kennedy, J.V.; Manikandan, E.; Mohamed, H.; Maaza, M. 2016 Photodegradation of organic pollutants RhB dye using UV simulated sunlight on ceria based TiO2 nanomaterials for antibacterial applications. Scientific Reports, 6: article no. 38064; doi: 10.1038/srep38064

Kennedy, J.V.; Murmu, P.P.; Leveneur, J.V.; Markwitz, A.; Futter, R.J. 2016 Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment. Applied Surface Science, 367: 52-58; doi: 10.1016/j.apsusc.2016.01.160

Nandasiri, M.I.; Shutthanandan, V.; Manandhar, S.; Schwarz, A.M.; Oxenford, L.; Kennedy, J.V.; Thevuthasan, S.; Henderson, M.A. 2015 Instability of hydrogenated TiO2. Journal of Physical Chemistry Letters, 6(22): 4627-4632; doi: 10.1021/acs.jpclett.5b02219

Kennedy, J.V.; Williams, G.V.M.; Murmu, P.P.; Ruck, B.J. 2013 Intrinsic magnetic order and inhomogeneous transport in Gd-implanted zinc oxide. Physical review. B, 88(21): article 214423; doi: 10.1103/PhysRevB.88.214423

Kennedy, J.V.; Leveneur, J.; Williams, G.V.M.; Mitchell, D.R.G.; Markwitz, A. 2011 Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing. Nanotechnology, 22: article 115602; doi: 10.1088/0957-4484/22/11/115602

Leveneur, J.; Kennedy, J.V.; Williams, G.V.M.; Metson, J.; Markwitz, A. 2011 Large room temperature magnetoresistance in ion beam synthesized surface Fe nanoclusters on SiO2. Applied Physics Letters, 98: article 053111

Kennedy, J.V.; Carder, D.A.; Markwitz, A.; Reeves, R.J. 2010 Properties of nitrogen implanted and electron beam annealed bulk ZnO. Journal of applied physics, 107: paper 103518

Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2009 UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method. Nanotechnology, 20(24): Paper 245502; doi: 10.1088/0957-4484/20/24/245502

Kennedy, J.V.; Markwitz, A.; Trodahl, H.J.; Ruck, B.J.; Durbin, S.M.; Gao, W. 2007 Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films. Journal of electronic materials, 36(4): 472-482

Granville, S.; Ruck, B.J.; Budde, F.; Koo, A.; Downes, J.E.; Trodahl, H.J.; Bittar, A.; Strickland, N.; Williams, G.V.M.; Lambrecht, W.R.L.; Learmonth, T.; Smith, K.E.; Kennedy, J.V.; Markwitz, A.; Schmitt, T. 2005 Optical conductivity and x-ray absorption and emission study of the band structure of MnN films. Physical review. B, 72: 8 p.

Markwitz, A.; Kennedy, J.V. 2005 Ion beam physics at Institute of Geological & Nuclear Sciences (GNS). New Zealand science review, 62(4): 129-134

Ruck, B.J.; Koo, A.; Lanke, U.D.; Budde, F.; Granville, S.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; Kennedy, J.V.; Markwitz, A. 2004 Quantitative study of molecular N2 trapped in disordered GaN:O films. Physical review. B, 70(23): 5 p.

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