John Vedamuthu Kennedy

 

Full Name: John Vedamuthu Kennedy

Position: Ion Beam Physics Research Scientist

Contact details

Email: J.Kennedy
Phone: +64-4-570 4771

Qualifications

1990: BSc (A), Physics; 1993: MSc (A), Physics; 1999: PhD (A), Physics

Areas of expertise

Business Development: Business Case development
Business Development: Manufacture and Production Engineering
Business Development: Team Leadership and Project Management
Business Development: nanotechnology
Engineering: Engineering Electronics
Engineering: Nanotechnology
Nanotechnology: Carbon nanotubes
Nanotechnology: Metal oxide
Nanotechnology: nano sensors
Nanotechnology: nanoclusters
Nuclear Physics: Advanced materials
Nuclear Physics: Air particulates
Nuclear Physics: Applied nuclear spectroscopy
Nuclear Physics: Biological specimens
Nuclear Physics: Ferroelectrics
Nuclear Physics: Galliumnitride
Nuclear Physics: High vacuum technology
Nuclear Physics: Ion Beam Analysis
Nuclear Physics: Ion implantation
Nuclear Physics: Material science
Nuclear Physics: Nanostructures
Nuclear Physics: New materials development
Nuclear Physics: Nuclear Microprobe studies
Nuclear Physics: Nuclear particle accelerators
Nuclear Physics: Nuclear spectroscopy
Nuclear Physics: Semiconductor physics
Nuclear Physics: Silicon nitride
Nuclear Physics: Study of substance composition
Nuclear Physics: Trace element analysis using PIXE
Nuclear Physics: Trace elements

Professional activities

McDiarmid Institute for Advance Materials and Nanotechnology: Associate Investigator
Royal Society of New Zealand: Physical sciences: Member
NZIP: member
NZ Association of Scientists: member
Material Research Society (MRS): Member
Material Research Society of New Zealand: Founding member
Microscopy New Zealand: Member
Australian Research Council Nanotechnology Network: Member
Light Alloy Manufacturing of New Zealand: member

Major publications

Kennedy, J.V.; Leveneur, J.; Williams, G.V.M.; Mitchell, D.R.G.; Markwitz, A. 2011 Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing. Nanotechnology, 22: article 115602; doi: 10.1088/0957-4484/22/11/115602

Leveneur, J.; Kennedy, J.V.; Williams, G.V.M.; Metson, J.; Markwitz, A. 2011 Large room temperature magnetoresistance in ion beam synthesized surface Fe nanoclusters on SiO2. Applied Physics Letters, 98: article 053111

Kennedy, J.V.; Carder, D.A.; Markwitz, A.; Reeves, R.J. 2010 Properties of nitrogen implanted and electron beam annealed bulk ZnO. Journal of applied physics, 107: paper 103518

Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2009 UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method. Nanotechnology, 20(24): Paper 245502; doi: 10.1088/0957-4484/20/24/245502

Kennedy, J.V.; Markwitz, A.; Trodahl, H.J.; Ruck, B.J.; Durbin, S.M.; Gao, W. 2007 Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films. Journal of electronic materials, 36(4): 472-482

Kennedy, J.V.; Mautner, M.N.; Barry, B.J.; Markwitz, A. 2007 Microprobe analysis of brine shrimp grown on meteorite extracts. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 260(1): 184-189; doi: 10.1016/j.nimb.2007.02.022

Kennedy, J.V.; Trompetter, W.J.; Barry, B.J.; Markwitz, A. 2007 Elemental analysis of urban stormwater particulate matter by PIXE. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 258(2): 435-439; doi: 10.1016/j.nimb.2007.02.090

Markwitz, A.; Johnson, S.; Rudolphi, M.; Finet, V.; Kennedy, J.V.; Barry, B.J.; Trompetter, W.J. 2007 Deuteron microprobe analysis of carbon in the transition region between SiC and Si nanostructures grown on Si. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 260(1): 325-328; doi: 10.1016/j.nimb.2007.02.042

Swartz, C.H.; Durbin, S.M.; Reeves, R.J.; Prince, K.; Kennedy, J.V.; Chandril, S.; Myers, T.H.; Carder, D.A. 2007 Photoluminescence, capacitance-voltage, and variable field Hall effect measurements of Mg-doped InN. Materials Research Society symposia proceedings, 955: 3 p.

Anderson, P.A.; Kinsey, R.J.; Durbin, S.M.; Markwitz, A.; Kennedy, J.V.; Asadov, A.; Gao, W.; Reeves, R.J. 2005 Magnetic and optical properties of the InCrN system. Journal of applied physics, 98(4): 5 p.

Granville, S.; Ruck, B.J.; Budde, F.; Koo, A.; Downes, J.E.; Trodahl, H.J.; Bittar, A.; Strickland, N.; Williams, G.V.M.; Lambrecht, W.R.L.; Learmonth, T.; Smith, K.E.; Kennedy, J.V.; Markwitz, A.; Schmitt, T. 2005 Optical conductivity and x-ray absorption and emission study of the band structure of MnN films. Physical review. B, 72: 8 p.

Markwitz, A.; Kennedy, J.V. 2005 Ion beam physics at Institute of Geological & Nuclear Sciences (GNS). New Zealand science review, 62(4): 129-134

Grigorescu, C.E.A.; Trodahl, H.J.; Strickland, N.M.; Bittar, A.; Manea, S.A.; Giapintzakis, J.; Monnereau, O.; Notonier, R.; Kennedy, J.V. 2004 Minority-spin band parameters in a NiMnSb thin film determined by spectral conductivity. Journal of applied physics, 96(11): 6421-6424

Kennedy, J.V.; Johnson, S.; Markwitz, A.; Rudolphi, M.; Baumann, H.; Magudapathy, P.; Nair, K.G.M. 2004 Suppression of silicon nanostructure growth by medium energy nitrogen ion implantation. International journal of nanoscience, 3(4/5): 431-437

Kennedy, J.V.; Markwitz, A.; Bubendorfer, A.; Long, N.; Dytlewski, N. 2004 Carbon depth profiling of superconducting YBCO thin films on nanometer scale. Current applied physics, 4(2-4): 292-295

Markwitz, A.; Kennedy, J.V.; Johnson, S.; Trompetter, W.J.; Rudolphi, M.; Baumann, H. 2004 SiC nanoboulders on silicon : a nuclear reaction analysis study of low energy 13C implanted and subsequently electron beam annealed (1 0 0) silicon. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 217(4): 583-588

Ruck, B.J.; Koo, A.; Lanke, U.D.; Budde, F.; Granville, S.; Trodahl, H.J.; Bittar, A.; Metson, J.B.; Kennedy, J.V.; Markwitz, A. 2004 Quantitative study of molecular N2 trapped in disordered GaN:O films. Physical review. B, 70(23): 5 p.

Kennedy, J.V.; Johnson, P.B.; Markwitz, A.; Varoy, C.R.; Short, K.T. 2003 Microprobe analysis of light elements in nanoporous surfaces produced by helium ion implantation. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 210: 543-547

Kennedy, J.V.; Markwitz, A. 2002 Heavy metal pollution studies of suspended sediments in Waiwhetu Stream water by PIXE. International journal of PIXE, 12(3/4): 189-197

Kennedy, J.V.; Markwitz, A.; Lanke, U.D.; McIvor, A.; Trodahl, H.J.; Bittar, A. 2002 Ion beam analysis of ion-assisted deposited amorphous GaN. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 190(1-4): 620-624

Kennedy, J.V.; Demortier, G. 2000 Au-Si eutectic alloy formation by Si implantation in polycrystalline Au. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 171: 325-331

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