Electron Beam Annealing (EBA)

Electron beam annealing of a silicon wafer

Electron beam annealing of a silicon wafer

For growing self-assembled nanostructures in an extremely controlled manner and for activation of ion implanted atoms.

  • Annealing of solid samples at high temperature and under high vacuum conditions
  • Heating up to 1300°C with precisely defined temperature gradients (typically, 1-100 C/s during ramp up and down)
  • User defined annealing cycles
  • Peak temperature: 300oC – 1400oC
  • Up to 20 samples in a chamber (~10 x 10 mm each)
  • Residual gas analyser attached for partial pressure analysis (1-100 amu).

Project Example: