Publications

2014 2013 2012 2011 2010 2009 2008 and earlier

2014

[158].Kennedy, J.V.; Murmu, P.P.; Manikandan, E.; Lee, S.Y. 2014. Investigation of structural and photoluminescence properties of gas and metal ions doped zinc oxide single crystals. Journal of Alloys and Compounds, 616: 614-617; doi: 10.1016/j.jallcom.2014.07.179

[157]. Abdul Aziz, S.A.; Kennedy, J.V.; Murmu, P.P.; Fang, F.; Cao, P. 2014. Structural and compositional characterization of ion beam sputtered hydroxyapatite thin films on Ti-6Al-4v. Asian Journal of Applied Sciences, 7(8): 745-752; doi: 10.3923/ajaps.2014.745.752

[156]. Manikandan, E.; Kavitha, G.; Kennedy, J.V. 2014. Epitaxial zinc oxide, graphene oxide composite thin-films by laser technique for micro-Raman and enhanced field emission study. Ceramics International, 40(10A): 16065-16070; doi: 10.1016/j.ceramint.2014.07.129

[155]. Kennedy, J.V.; Leveneur, J.; Murmu, P.P.; Anilkumar, P.; Iqbal, A. 2014. Fabrication of Gd nanoparticles in SiO2/Si substrate by ion implantation. International Journal of ChemTech Research, 6(6): 3924-3926

[154]. Arulkumaran, S.; Ng, G.I.; Ranjan, K.; Saw, G.Z.; Murmu, P.P.; Kennedy, J. 2014 Improved Device Isolation in AlGaN/GaN HEMTs on Si by Heavy Kr+ Ion Implantation, IEEE explore Digital library ISBN:978-1-4799-5405-6 , Page(s): 115 - 116 , DOI: 10.1109/DRC.2014.6872324.

[153]. Leveneur, J.; Kremer, F.; Kennedy, J.V.; Ridgway, M.C.; Williams, G.V.M.; Metson, J.B. 2014 Enhancement of the magnetic properties of iron nanoparticles upon incorporation of samarium. Materials Research Express, 1(2): article 026110; doi:10.1088/2053-1591/1/2/026110

[152]. Zhang, S.; Liu, H.; Amarsingh, G.; Cheung, C.C.H.; Hogl, S.; Narayanan, U.; Zhang, L.; McHarg, S.; Xu, J.; Gong, D.; Kennedy, J.V.; Barry, B.J.; Choong, Y.S.; Phillips, A.R.J.; Cooper, G.J.S. 2014. Diabetic cardiomyopathy is associated with defective myocellular copper regulation and both defects are rectified by divalent copper chelation. Cardiovascular Diabetology, Online first: doi: 10.1186/1475-2840-13-100

[151]. Kennedy, J.; Murmu, P.P. ; Gupta, P.S. ; Carder, D.A. ; Chong, S.V. ; Leveneur, J. ; Rubanov, S. 2014, Effects of annealing on the structural and optical properties of zinc sulfide thin films deposited by ion beam sputtering. Materials Science in Semiconductor Processing, 26: 561-566.

[150]. Bubendorfer, A.J.; Ingham, B.; Kennedy, J.V.; Arnold, W.M. 2014. Origin of electrokinetic variability in microfluidic devices cast on SU-8 epoxy. 6 p. In: Proceedings of the 2014 ESA Annual Meeting on Electrostatics, June 17-19, 2014, University of Notre Dame, IN. Eectrastatics Society of America.

[149]. Aziz, S.A.A.; Kennedy, J.V.; Cao, P. 2014. Effect of annealing on microstructure of hydroxyapatite coatings and their behaviours in simulated body fluid. Advanced Materials Research, 922: 657-662.

[148]. Prakash, T.; Williams, G.V.M.; Kennedy, J.V.; Murmu, P.P.; Leveneur, J.; Chong, S.V.; Rubanov, S. 2014. Synthesis and structural, magnetic and magnetotransport properties of permalloy powders containing nanoparticles prepared by arc discharge. Journal of Alloys and Compounds, 608: 153-157.

[147]. Chaudhary, O.J.; Calius, E.; Kennedy, J.V.; Travas-Sejdic, J. 2014. Polymer brushes for improvement of dry adhesion in biomimetic dry adhesives. International journal of nanotechnology, 11(5-8): 636-644.

[146]. Chong, S.V.; Williams, G.V.M.; Sambale, S.; Kennedy, J.V.; Kadowaki, K. 2014. Magneto-resistance study of AFe2As2 (A=Sr, Ba) iron-based compounds. International journal of nanotechnology, 11(5-8): 403-411.

[145]. Kennedy, J.V.; Leveneur, J.; Fang, F.; Markwitz, A. 2014. Enhanced reduction of silicon oxide thin films on silicon under electron beam annealing. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 332: 421–425.

[144]. Leveneur, J.; Kennedy, J.V.; Williams, G.V.M.; Sasase, M.; Metson, J.B.; Markwitz, A. 2014. Structural and chemical changes during the growth of Fe nanoparticles in SiO2 under low energy ion implantation. International journal of nanotechnology, 11(5-8): 466-476.

[143]. Trompetter, W.J.; Davy, P.K.; Barry, B.J.; Kennedy, J.V. 2014. Influence of filter thickness on PESA calibration. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 332: 445–448.

[142]. Kennedy, J.V.; Leveneur, J.; Turner, J.; Futter, R.J.; Williams, G.V.M. 2014. Applications of nanoparticle-based fluxgate magnetometers for positioning and location. p. 228-232 In: 2014 IEEE Sensors Applications Symposium (SAS 2014) proceedings. Piscataway, NJ: IEEE. DOI:10.1109/SAS.2014.6798951

[141]. Fang, F.; Kennedy, J.; Carder, D.; Futter, J.; Rubanov, S. 2014. Investigations of near infrared reflective behaviour of TiO2 nanopowders synthesized by arc discharge. Optical Materials, 36(7): 1260-1265.

[140]. Kaviyarasu, K.; Manikandan, E.; Kennedy, J.V.; Jayachandran, M. 2014. Quantum confinement and photoluminescence of well-aligned CdO nanofibers by solvothermal route. Materials letters, 120: 243-245.

[139]. Kaviyarasu, K.; Manikandan, E.; Paulraj, P.; Mohamed, S.B.; Kennedy, J.V. 2014. One dimensional well-aligned CdO nanocrystal by solvothermal method. Journal of Alloys and Compounds, 593: 67-70.

[138]. McCann, D.M.; Williams, G.V.M.; Hyndman, A.; Stephen, J.; Kennedy, J.V. 2014. Large magnetoresistance in a permalloy/Ba2FeMoO6 sputtered film. Physica B, 436: 126-129.

2013

[137]. Bubendorfer, A.J.; Ingham, B.; Kennedy, J.V.; Arnold, W.M. 2013. Contamination of PDMS microchannels by lithographic molds. Lab on a Chip, 13: 4312-4316.

[136]. Chong, S.V.; Williams, G.V.M.; Kennedy, J.V.; Fang, F.; Tallon, J.L.; Kadowaki, K. 2013. Large low-temperature magnetoresistance in SrFe2As2 single crystals. EPL, 104(1): 17002.

[135]. Kaviyarasu, K.; Premanand, D.; Kennedy, J.V.; Manikandan, E. 2013. Synthesis of Mg doped TiO2 nanocrystals prepared by wet-chemical method: optical and microscopic studies. International journal of nanoscience, 12: 1350033.

[134]. Kennedy, J..; Williams, G.V.M.; Murmu, P.P.; Ruck, B.J. 2013. Intrinsic magnetic order and inhomogenous transport in Gd-implanted zinc oxide. Physical review B, 88(21): 214423.

[133]. Krumdieck, S.; Davies, S.; Bishop, C.M.; Kemmitt, T.; Kennedy, J.V. 2013. Al2O3 coatings on stainless steel using pulsed-pressure MOCVD. Surface and coatings technology, 230: 208-212.

[132]. Trompetter, W.J.; Reyes, A.G.; Kennedy, J.V.; Markwitz, A. 2013. Use of micro-proton elastic scattering analysis to determine water content in geological powders. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 306: 257-260.

[131]. Zhang, L.; Ward, M-L.; Phillips, A.R.J.; Zhang, S.; Kennedy, J.V.; Barry, B.J.; Cannell, M.B.; Cooper, G.J.S. 2013. Protection of the heart by treatment with a divalent-copper-selective chelator reveals a novel mechanism underlying cardiomyopathy in diabetic rats. Cardiovascular Diabetology, 12(1): 123.

[130]. Carder, D.A.; Markwitz, A.; Reeves, R.J.; Kennedy, J.V.; Fang, F. 2013. Atomic retention and near infrared photoluminescence from PbSe nanocrystals fabricated by sequential ion implantation and electron beam annealing. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 307: 154-157.

[129]. Fang, F.; Johnson, P.B.; Kennedy, J.V.; Markwitz, A. 2013. Magnetic-ion-doped silicon nanostructures fabricated by ion implantation and electron beam annealing. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 307: 131-136.

[128]. Fang, F.; Kennedy, J.V.; Futter, R.J.; Leveneur, J. 2013. ZnO nanostructures synthesized by arc discharge for optical coating and sensor applications. : 869-873; doi: 10.1109/ICSensT.2013.6727774 In: 2013 Seventh International Conference on Sensing Technology (ICST), 3-5 December 2013. Proceedings of the International Conference on Sensing Technology.

2012

[127]. Booth, M.A.; Leveneur, J.; Costa, A.S.; Kennedy, J.V.; Harbison, S-A.; Travas-Sejdic, J. 2012. Modifying the conductivity of polypyrrole through low-energy lead ion implantation. Materials chemistry and physics, 136(2/3): 903-909.

[126]. Booth, M.A.; Leveneur, J.; Costa, A.S.; Kennedy, J.V.; Travas-Sejdic, J. 2012. Tailoring the conductivity of polypyrrole films using low-energy platinum ion implantation. Journal of physical chemistry C, 116(14): 8236-8242.

[125]. Elayaraja, K.; Rajesh, R.; Ahymah Joshy, M.I.; Sarath Chandra, V.; Suganathi, R.V.; Kennedy, J.V.; Kulriya, P.K.; Sulania, S.; Asokan, K.; Kanjilal, D.; Avasthi, D.K.; Varma, H.K.; Narayana Kalkura, S. 2012. Enhancement of wettability and antibiotic loading/release of hydroxyapatite thin film modified by 100 MeV Ag7+ ion irradiation. Materials chemistry and physics, 134: 464-477.

[124]. Fang, F.; Kennedy, J.V.; Manikandan, E.; Futter, R.J.; Markwitz, A. 2012. Morphology and characterization of TiO2 nanoparticles synthesized by arc discharge. Chemical physics letters, 521: 86-90.

[123]. Hopf, T.; Schuette, F.; Leveneur, J.; Kennedy, J.V.; Markwitz, A. 2012. Ion-beam synthesis of 3C-SiC surface layers on silicon. Surface and interface analysis, 44: 399-404.

[122]. Chong, S.V.; Telfer, S.G.; Kennedy, J.V.; Jameson, G.B.; Waterland, M.R.; Tallon, J.L. 2012. Influence of doping on hybrid organic-inorganic WO3(4,4'-bipyridyl)0.5 materials. Journal of physical chemistry C, 116(5): 3787-3792.

[121]. Kennedy, J.V.; Leveneur, J.; Markwitz, A. 2012. High temperature annealing effects on low energy iron implanted SiO2. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 273: 182-185.

[120]. Kennedy, J.V.; Leveneur, J.; Takeda, Y.; Williams, G.V.M.; Kupke, S.; Mitchell, D.R.G.; Markwitz, A.; Metson, J.B. 2012. Evolution of the structure and magneto-optical properties of ion beam synthesized iron nanoclusters. Journal of materials science, 47(3): 1127-1134.

[119]. Leveneur, J.; Sanchez, D.F.; Kennedy, J.V.; Grande, P.L.; Williams, G.V.M.; Metson, J.B.; Cowie, B.C.C. 2012. Iron-based bimagnetic core/shell nanostructures in SiO2: a TEM, MEIS, and energy-resolved XPS analysis. Journal of nanoparticle research, 14(10): 1149.

[118]. Markwitz, A.; Carder, D.A.; Hopf, T.; Kennedy, J.V.; Kuei, C.T.; Muecklich, A.; Osipowicz, T. 2012. Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb+ and Se+ ion implantation into SiO2. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 273: 199-202.

[117]. Murmu, P.P.; Kennedy, J.V.; Ruck, B.J.; Markwitz, A.; Williams, G.V.M.; Rubanov, S. 2012. Structural and magnetic properties of low-energy Gd implanted ZnO single crystals. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 272: 100-103.

[116]. Murmu, P.P.; Kennedy, J.V.; Ruck, B.J.; Williams, G.V.M.; Markwitz, A.; Rubanov, S.; Suvorova, A.A. 2012. Effect of annealing on the structural, electrical and magnetic properties of Gd-implanted ZnO thin films. Journal of materials science, 47(3): 1119-1126.

[115]. Murmu, P.P.; Kennedy, J.V.; Williams, G.V.M.; Ruck, B.J.; Granville, S.; Chong, S.V. 2012. Observation of magnetism, low resistivity, and magnetoresistance in the near-surface region of Gd implanted ZnO. Applied physics letters, 101(8): 082408.

[114]. Pillai, S.K.; Motshekga, S.C.; Ray, S.S.; Kennedy, J.V. 2012. Field emission characteristics of SnO2/CNTs composites prepared by microwave-assisted wet impregnation. Journal of nanomaterials, 2012: 861591.

[113]. Kennedy, J.V.; Leveneur, J.; Metson, J.; Williams, G.V.M.; Rubanov, S.; Markwitz, A. 2012. Structural and chemical changes during ion beam synthesis of Fe nanoclusters on silicon nitride. p. lii-lvii In: Joseph, V.; Moorthy Babu, S; Balakumar, S.; Madhavan, J.; Merline Shyla, J. (eds) Proceedings of International Conference on Advanced Materials (ICAM 2012), January 5-7, 2012.

[112]. Manikandan, E.; Brain, Y.; Mwakikunga, B.W.; Kavitha, G.; Santhanalakshmi, J.; Kennedy, J.V.; Krishnan, R.; Panigrahi, B.K. 2012. ZnO nanocomposite thin film synthesis by reactive PLD technique. p. 177-182 In: Joseph, V.; Moorthy Babu, S; Balakumar, S.; Madhavan, J.; Merline Shyla, J. (eds) Proceedings of International Conference on Advanced Materials (ICAM 2012), January 5-7, 2012.

[111]. Murmu, P.P.; Kennedy, J.V.; Ruck, B.J.; Williams, G.V.M.; Markwitz, A.; Rubanov, S.; Suvorova, A.A. 2012. Correlation between microstructural and magnetic properties of Tb implanted ZnO. AIP conference proceedings, 1525:300-304.

[110]. Kennedy, J.; Leveneur, J.; Williams, G.V.M.; Mitchell and A Markwitz, D.R.G. 2011. High conductivity transparent carbon nanotube films deposited from superacid. Nanotechnology 22:309502.

[109]. Zhu, T-P.; Fang, F.; Kennedy, J.V.; Gao, W. 2012. Electrochemical behaviours of Mg-4Zn-3Sn cast alloy modified by Ti ion implantation. International journal of modern physics: conference series, 6: 700-704.

[108]. Arunkumar, J.; David, C.; Varghese Anto, C.; Nair, K.G.M.; Kalavathi, S.; Rajaraman, R.; Amarendra, G.; Panigrahi, B.K.; Magudapathy, P.; Kennedy, J.V. 2011. A study on the redistribution of ion-implanted nitrogen in Ti-modified austenitic steel. Journal of nuclear materials, 414(3): 382-385.

2011

[107]. Chong, S.V.; Tallon, J.L.; Fang, F.; Kennedy, J.V.; Kadowaki, K.; Williams, G.V.M. 2011. Surface superconductivity on SrFe2As2 single crystals induced by ion implantation. Euro Physics Letters (EPL), 94(3):37009.

[106]. Fang, F.; Kennedy, J.V.; Futter, R.J.; Hopf, T.; Markwitz, A.; Manikandan, E.; Henshaw, G. 2011. Size-controlled synthesis and gas sensing application of tungsten oxide nanostructures produced by arc discharge. Nanotechnology, 22(33): 335702.

[105]. Kennedy, J.V.; Leveneur, J.; Murmu, P.; Markwitz, A. 2011. Microstructure evolution in nitrogen implanted sapphire. Advanced Materials Research, 275: 222-225.

[104]. Kennedy, J.V.; Leveneur, J.; Williams, G.V.M.; Mitchell, D.R.G.; Markwitz, A. 2011. Fabrication of surface magnetic nanoclusters using low energy ion implantation and electron beam annealing. Nanotechnology, 22: 115602.

[103]. Leveneur, J.; Kennedy, J.V.; Williams, G.V.M.; Metson, J.; Markwitz, A. 2011. Large room temperature magnetoresistance in ion beam synthesized surface Fe nanoclusters on SiO2. Applied physics letters, 98: 053111.

[102]. Leveneur, J.; Waterhouse, G.I.N.; Kennedy, J.V.; Metson, J.B.; Mitchell, D.R.G. 2011. Nucleation and growth of Fe nanoparticles in SiO2: a TEM, XPS, and Fe L-edge XANES investigation. Journal of physical chemistry C, 115(43): 20978-20985.

[101]. Murmu, P.P.; Mendelsberg, R.J.; Kennedy, J.V.; Carder, D.A.; Ruck, B.J.; Markwitz, A.; Reeves, R.J.; Malar, P.; Osipowicz, T. 2011. Structural and photoluminescence properties of Gd implanted ZnO single crystals. Journal of applied physics, 110(3): 033534.

[100]. Arunkumar, J.; David, C.; Nair, K.G.M.; Magudapathy, P.; Panigrahi, B.K.; Kennedy, J.V. 2011. Annealing behavior of ion-implanted nitrogen in D9 steel. AIP conference proceedings, 1349: 1015-1016.

[99]. Fang, F.; Futter, R.J.; Kennedy, J.V.; Markwitz, A. 2011. Sensors based on metal oxide nanostructures synthesized by arc discharge. p. 17-20 (article 6136948) In: Mukhopadhyay, S.C.; Fuchs, A.; Jayasundera, K.P. (eds) ICST 2011: 2011 Fifth International Conference on Sensing Technology, Massey University, Palmerston North, New Zealand, Nov 28-Dec 1, 2011. IEEE.

[98]. Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2011. Synthesis of zinc oxide nanorods and their sensing properties. Materials science forum 700:150-153.

[97]. Leveneur, J.; Kennedy, J.V.; Williams, G.V.M.; Fang, F.; Metson, J.B.; Markwitz, A. 2011. Effects of implanted Fe+ fluences on the growth and magnetic properties of surface nanoclusters. Materials science forum 700: 37-40.

[96]. Markwitz, A.; Futter, R.J.; Kennedy, J.V.; Fang, F.; Carder, D.A.; Leveneur, J.; Dickinson, M. 2011. Surface hardening of aluminium surfaces by scandium ion implantation. p. 199-208 In: Bhattacharyya, D.; Lin, R.J.T.; Srivatsan, T.S. (eds) Processing and fabrication of advanced materials. XIX. Volume 1.

[95]. Murmu, P.P.; Kennedy, J.V.; Ruck, B.J.; Markwitz, A. 2011. Characterization of the structural and electrical properties of ion beam sputtered ZnO films. Materials science forum 700: 49-52.

2009

  • Bari, M.R.; Blaikie, R.J.; Fang, F.; Markwitz, A. 2009 Conductive atomic force microscopy study of self-assembled silicon nanostructures. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 27(6): 3051-3054
  • Carder, D.A.; Markwitz, A. 2009 Field emission measured from nanostructured germanium and silicon thin films. Applied surface science, 256(4): 1003-1005; doi:10.1016/j.apsusc.2009.05.066
  • Fang, A.; Markwitz, A. 2009 Controlled fabrication of Si nanostructures by high vacuum electron beam annealing. Physica E, 41(10): 1853-1858; doi:10.1016/j.physe.2009.02.024
  • Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2009 UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method. Nanotechnology, 20(24): Paper 245502; doi:10.1088/0957-4484/20/24/245502
  • Fang, F.; Markwitz, A. 2009 Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing. Journal of nanoscience and nanotechnology, 9(5): 2950-2955
  • Markwitz, A.; Kennedy, J.V. 2009 Group-IV and V ion implantation into nanomaterials and elemental analysis on the nanometre scale. International journal of nanotechnology, 6(3/4): 369-383
  • Strickland, N.M.; Talantsev, E.F.; Long, N.J.; Xia, J.A.; Searle, S.D.; Kennedy, J.V.; Markwitz, A.; Rupich, M.W.; Li, X.; Sathyamurthy, S. 2009 Flux pinning by discontinuous columnar defects in 74 MeV Ag-irradiated YBa2Cu3O7 coated conductors. Physica C. Superconductivity and its applications, 469(23/24): 2060-2067; doi:10.1016/j.physc.2009.08.009
  • Hueger, E.; Schmidt, H.; Stahn, J.; Braunschweig, B.; Geckle, U.; Bruns, M.; Markwitz, A. 2009 Atomic transport in metastable compounds : case study of self-diffusion in Si-C-N films using neutron reflectometry. Physical review. B, 80: 220101 (R)
  • Lim, K.P.; Pham, H.T.; Yoon, S.F.; Markwitz, A.; Yakovlev, N. 2009 Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy. Physica status solidi RRL, 3(7/8): 263-265; doi:10.1002/pssr.200903229

2008

  • Fielitz, P.; Borchardt, G.; Ganschow, S.; Bertram, R.; Markwitz, A. 2008 26Al tracer diffusion in titanium doped single crystalline alpha-Al2O3. Solid state ionics, 179(11/12): 373-379; doi:10.1016/j.ssi.2008.03.007
  • Kennedy, J.V.; Granville, S.; Markwitz, A.; Ruck, B.J.; Trodahl, H.J. 2008 Ion beam analysis of rare earth nitride thin films. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 266(8): 1558-1561; doi: 10.1016/j.nimb.2008.01.052
  • Markwitz, A.; Baumann, H.; Davy, P.K.; Beckert, C.; Kennedy, J.V. 2008 Sub-surface retention of Pb atoms in silicon after low-energy ion implantation and electron beam annealing. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 266(8): 1553-1557; doi: 10.1016/j.nimb.2008.01.044
  • Markwitz, A.; Baumann, H.; Davy, P.K.; Johnson, P.B. 2008 Diffusion of Pb in carbon ion-implanted silicon : discovery of a new crystalline phase after electron beam annealing. Vacuum, 82(11): 1306-1311; doi: 10.1016/j.vacuum.2008.02.006
  • Markwitz, A.; Davy, P.K.; Kennedy, J.V.; Baumann, H. 2008 Nanostructuring at the surface of low-energy lead-implanted silicon by electron beam annealing. Surface and interface analysis, 40(5): 931-934; doi: 10.1002/sia.2805

2007

  • Durbin, S.M.; Anderson, P.A.; Markwitz, A.; Kennedy, J.V. 2007 Oxygen uptake of InN thin films as determined by ion beam analysis. Thin solid films, 515(7/8): 3736-3739
  • Johnson, S.; Zuelicke, U.; Markwitz, A. 2007 Universal characteristics of resonant-tunneling field emission from nanostructured surfaces. Journal of applied physics, 101(12): Article no. 123712
  • Kennedy, J.V.; Markwitz, A.; Trodahl, H.J.; Ruck, B.J.; Durbin, S.M.; Gao, W. 2007 Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films. Journal of electronic materials, 36(4): 472-482
  • Markwitz, A.; Barry, B.J.; Eichhorn, F. 2007 X-ray diffraction study of low-energy carbon-ion implanted Si(001). Surface and interface analysis, 39(5): 415-418; doi: 10.1002/sia.2537
  • Markwitz, A.; Johnson, S.; Rudolphi, M.; Finet, V.; Kennedy, J.V.; Barry, B.J.; Trompetter, W.J. 2007 Deuteron microprobe analysis of carbon in the transition region between SiC and Si nanostructures grown on Si. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 260(1): 325-328; doi:10.1016/j.nimb.2007.02.042
  • Rudolphi, M.; Markwitz, A.; Baumann, H. 2007 Surface cavities produced by high-dose nitrogen ion implantation into silicon. Surface and interface analysis, 39(8): 698-701
  • Strickland, N.M.; Long, N.J.; Xia, J.; Kennedy, J.V.; Markwitz, A.; Zondervan, A.; Rupich, M.W.; Zhang, W.; Li, X.; Kodenkandath, T.; Huang, Y. 2007 Enhanced flux pinning in MOD second generation HTS wires by silver- and copper-ion irradiation. IEEE transactions on applied superconductivity, 17(2): 3306-3309

2006

  • Anderson, P.A.; Kendrick, C.E.; Kinsey, R.J.; Kennedy, J.V.; Markwitz, A.; Reeves, R.J.; Durbin, S.M. 2006 Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy. Smart materials and structures, 15: S87-S91
  • Granville, S.; Budde, F.; Ruck, B.J.; Trodahl, H.J.; Williams, G.V.M.; Bittar, A.; Ryan, M.; Kennedy, J.V.; Markwitz, A.; Metson, J.B.; Prince, K.E.; Cairney, J.M.; Ridgway, M.C. 2006 Single phase nanocrystalline GaMnN thin films with high Mn content. Journal of applied physics, 100: 084310; doi:10.1063/1.2357701
  • Johnson, P.B.; Kennedy, J.V.; Markwitz, A. 2006 Atom ingress from synthetic body fluid into nanoporous layers formed in titanium by helium ion-implantation. Current applied physics, 6(3): 327-330
  • Johnson, S.; Markwitz, A.; Rudolphi, M.; Baumann, H.; Oei, S.P.; Teo, K.B.K.; Milne, W.I. 2006 Field emission properties of self-assembled silicon nanostructures formed by electron beam annealing. Current applied physics, 6(3): 503-506; doi:10.1016/j.cap.2005.11.049
  • Kennedy, J.V.; Markwitz, A.; Li, Z.; Gao, W. 2006 Characterization of ZnO films by ion beam analysis. International journal of modern physics B, 20(25-27): 4655-4660; doi:10.1142/S0217979206041847
  • Kennedy, J.V.; Markwitz, A.; Li, Z.; Gao, W.; Kendrick, C.; Durbin, S.; Reeves, R. 2006 Modification of electrical conductivity in RF magnetron sputtered ZnO films by low-energy hydrogen ion implantation. Current applied physics, 6(3): 495-498
  • Markwitz, A.; Johnson, S.; Kennedy, J.V.; Rudolphi, M.; Baumann, H. 2006 Formation of large SiC nanocrystals on Si(100) by 12C implantation and electron beam annealing. Current applied physics, 6(3): 507-510
  • Markwitz, A.; Johnson, S.; Rudolphi, M. 2006 Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. Applied physics letters, 89: 153122; doi:10.1063/1.2361162

2005

  • A Markwitz , S. Johnson, M. Rudolphi, H. Baumann and A. Mücklich, Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing Appl. Phys. Lett. 86 , 13108 (2005)
  • S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, P. –Y. Kuo, R. Blaikie and A. Mücklich, Effect of crystal orientation on self-assembled silicon nanostructures formed by electron beam annealing J. Appl. Phys, 97 , 94301 (2005)

2004

  • A. Markwitz, V. J. Kennedy, S. Johnson, W. J. Trompetter, M. Rudolphi and H. Baumann, Nuclear reaction analysis of low energy 13 C implanted and subsequently electron beam annealed (100) silicon , Nucl. Instrum. Meth B. 217 , 583 (2004)
  • S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, S. P. Oei, K. B. K. Teo, and W. I. Milne, Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon , Appl. Phys. Lett. 85 , 3277 (2004)
  • S. Johnson, A. Markwitz, M. Rudolphi and H. Baumann, Nanostructuring of silicon (100) using electron beam rapid thermal annealing, J. Appl. Phys. 96 , 605 (2004)

2003

  • V.A. Christie, S.I. Liem, R. Reeves, V.J. Kennedy, A. Markwitz and S.M. Durbin, “Characterization of polycrystalline gallium nitride grown by plasma-assisted evaporation”, AMN-1 The MacDiarmid Institute for Advanced Materials and Nanotechnology, 9-13 February 2003, Wellington, New Zealand

2002

  • A.Markwitz, M. Waldschmidt, K. Short and W. Matz, “Surface structuring and phase formation in thin metallic layers deposited at various temperatures”, Surface and Interface Analysis1 (2002) 1
  • V.J. Kennedy, A. Markwitz, G.V. White and I.W.M. Brown, “Probing for fluorine in nitrided SiO2 films using ion beam analysis”, Modern Physics Letters B15 (2002) 1332
  • G.L. Moretto, A. Markwitz, S.B. Hall, A.K. Burrell, D.L. Officer, “The Nucleation and Growth, and Characterisation of Conducting Polymers”, Modern Physics Letters B15 (2002) 1411
  • W.J. Trompetter, A. Markwitz and M. Hyland, “Role of oxides in high velocity thermal spray coatings”, Nuclear Instruments and Methods B190 (2002) 518

2001

  • A.Markwitz, G.V. White, W.J. Trompetter, I.W.M. Brown, N. Dytleswki and D. Cohen, “Discovery of highly reactive regions at the surface of thin SiO2 films during high-temperature nitridation experiments”, Microchimica Acta 137 (2001) 49
  • A.Bittar, H.J. Trodahl, N.T. Kemp and A. Markwitz, “Ion assisted deposition of amorphous GaN: Raman and optical properties”, Applied Physics Letters 78 (2001) 619
  • Markwitz and G.V. White, “Nitridation of ultra thin silicon oxide (SiO2) layers with ion beam analysis on the nanometer scale”, Advanced Materials 13 (2001) 1027
  • Markwitz, “Overstoichiometric Nitrogen Implantations into Silicon – Formation of nanobubbles vs. nanowhiskers”, Journal of Nanoscience and Nanotechnology 1 (2001) 393