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Damian Carder
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Full Name: Damian Carder
Position: Scientist: Nanoelectronic Research
Contact details
Email: d.carder
Phone: +64-4-570 4673
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Qualifications
1999: MPhys, Physics; 2003: PhD, Quantum Cascade Lasers Areas of expertise
Nuclear Physics: Advanced materials
Nuclear Physics: Laser spectroscopy
Nuclear Physics: Material science
Nuclear Physics: Nanoclusters
Nuclear Physics: Nanostructures
Nuclear Physics: Nanotechnology
Nuclear Physics: Nanowhiskers
Nuclear Physics: New materials development
Nuclear Physics: Semiconductor physics
Technical: Data analysis
Professional activities
McDiarmid Institute for Advance Materials and Nanotechnology: Associate Investigator
Major publications
Carder, D.A.; Markwitz, A. 2009 Field emission measured from nanostructured germanium and silicon thin films. Applied surface science, 256(4): 1003-1005; doi:10.1016/j.apsusc.2009.05.066 [link to electronic copy]
Markwitz, A.; Kant, K.; Carder, D.A.; Johnson, P.B. 2009 Low-energy Fe+ ion implantation into silicon nanostructures. p. 149-152 IN: Hendy, S.C.; Brown, I.W.M. (eds) Advanced Materials and Nanotechnology : proceedings of the International Conference (AMN-4), Dunedin, New Zealand, 8-12 February 2009. Melville, NY: American Institute of Physics. AIP conference proceedings 1151.
Carder, D.A.; Markwitz, A.; Baumann, H.; Kennedy, J.V. 2008 Self-assembled germanium nanostructures formed using electron beam annealing. p. 276-279; doi: 10.1016/j.cap.2007.10.014 IN: Hendy, S.C.; Brown, I.W.M. (eds) AMN-3 : third International Conference on Advanced Materials and Nanotechnology, Wellington, New Zealand, 11-16 February 2007. Netherlands: Amsterdam. Current applied physics 8(3/4). [link to electronic copy]
Pavlov, S.G.; Huebers, H-W.; Haas, P.M.; Hovenier, J.N.; Klaassen, T.O.; Zhukavin, R.K.; Shastin, V.N.; Carder, D.A.; Redlich, B. 2008 Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon. Physical review. B, Condensed matter and materials physics, 78(16): 10.1103/PhysRevB.78.165201
Swartz, C.H.; Durbin, S.M.; Anderson, P.A.; Carder, D.A.; Reeves, R.J.; Chandril, S.; Myers, T.H.; Kennedy, J.V.; Ahrenkiel, S.P. 2008 Mg doping of InN and the use of yttrium-stabilised zirconia substrates. Physica status solidi c, 5(2): 508-510; doi: 10.1002/pssc.200777470
Anderson, P.A.; Swartz, C.H.; Carder, D.A.; Reeves, R.J.; Durbin, S.M.; Chandril, S.; Myers, T.H. 2006 Buried p-type layers in Mg-doped InN. Applied physics letters, 89(18): art. 184104
Jobson, K.W.; Wells, J.-P.R.; Schropp, R.E.I.; Carder, D.A.; Phillips, P.J.; Dijkhuis, J.I. 2006 Time resolved spectroscopy of Ge-H stretching vibrations in hydrogenated amorphous germanium. Infrared physics and technology, 49(1/2): 3-6
Jobson, K.W.; Wells, J.-P.R.; Schropp, R.E.I.; Carder, D.A.; Phillips, P.J.; Dijkhuis, J.I. 2006 The similarities between amorphous silicon and germanium stretch mode dynamics. Journal of non-crystalline solids, 352(9-20:Spec. Iss.): 1268-1271
Jobson, K.W.; Wells, J.-P.R.; Schropp, R.E.I.; Carder, D.A.; Phillips, P.J.; Dijkhuis, J.I. 2006 Relaxation processes of the Ge-H stretch modes in hydrogenated amorphous germanium. Physical review. B, Condensed matter and materials physics, 73(15): 1-5
Murdin, B.N.; Litvinenko, K.; Clarke, D.G.; Pidgeon, C.R.; Murzyn, P.; Phillips, P.J.; Carder, D.A.; Berden, G.; Redlich, B.; Van der Meer, A.F.G.; Clowes, S.; Harris, J.J.; Cohen, L.F.; Ashley, T.; Buckle, L. 2006 Spin relaxation by transient monopolar and bipolar optical orientation. Physical review letters, 96(9): 1-4
Pavlov, S.G.; Huebers, H.-W.; Hovenier, J.N.; Klaassen, T.O.; Carder, D.A.; Phillips, P.J.; Redlich, B.; Riemann, H.; Zhukavin, R.Kh.; Shastin, V.N. 2006 Stimulated terahertz stokes emission of silicon crystals doped with antimony donors. Physical review letters, 96(3): doi: 10.1103/PhysRevLett.96.037404
Sellers, I.R.; Mowbray, D.J.; Badcock, T.J.; Wells, J.-P.R.; Phillips, P.J.; Carder, D.A.; Liu, H.Y.; Groom, K.M.; Hopkinson, M. 2006 Infrared modulated interlevel spectroscopy of 1.3 micro-m self-assembled quantum dot lasers using a free electron laser. Applied physics letters, 88(8): doi: 10.1063/1.2177656
Zhao, M.; Karim, A.; Ni, W.-X.; Pidgeon, C.R.; Phillips, P.J.; Carder, D.A.; Murdin, B.N.; Fromherz, T.; Paul, D.J. 2006 Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering. Journal of luminescence, 121(2): 403-408
Kelsall, R.W.; Ikonic, Z.; Murzyn, P.; Pidgeon, C.R.; Phillips, P.J.; Carder, D.A.; Harrison, P.; Lynch, S.A.; Townsen, P.; Paul, D.J.; Liew, S.L.; Norris, D.J.; Cullis, A.G. 2005 Intersubband lifetimes in p-Si/SiGe terahertz quantum cascade heterostructures. Physical review. B, Condensed matter and materials physics, 71(11): 1-10
Pidgeon, C.R.; Phillips, P.J.; Carder, D.A.; Murdin, B.N.; Fromherz, T.; Paul, D.J.; Ni, W.-X.; Zhao, M. 2005 Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy. Semiconductor science and technology, 20(10): L50-L52
Revin, D.G.; Wilson, L.R.; Carder, D.A.; Cockburn, J.W.; Steer, M.J.; Hopkinson, M.; Airey, R.; Garcia, M.; Sirtori, C.; Rouillard, Y.; Barate, D.; Vicet, A. 2004 Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations. Journal of applied physics, 95(12): 7584-7587
Wells, J.-P.R.; Lidzey, D.G.; Phillips, P.J.; Carder, D.A.; Fox, A.M. 2004 Ultrafast measurements of vibrational relaxation in the conjugated polymer poly(9, 9-dioctylfluorene). Applied physics letters, 85(15): 3080-3082
Wells, J.-P.R.; Van Hattum, E.D.; Phillips, P.J.; Carder, D.A.; Habraken, F.H.P.M.; Dijkhuis, J.I. 2004 Degenerate four wave mixing spectroscopy of oxygen vibrations in amorphous silicon. Journal of luminescence, 108(1/4): 173-176
Wells, J.-P.R.; Van Hattum, E.D.; Schropp, R.E.I.; Phillips, P.J.; Carder, D.A.; Habraken, F.H.P.M.; Dijkhuis, J.I. 2004 Ultrafast spectroscopy of localised vibrational modes in amorphous silicon using a free electron laser. Physica status solidi. B. Basic research, 241(15): 3474-3479
Zibik, E.A.; Wilson, L.R.; Green, R.P.; Bastard, G.; Ferreira, R.; Phillips, P.J.; Carder, D.A.; Wells, J.-P.R.; Cockburn, J.W.; Skolnick, M.S.; Steer, M.J.; Hopkinson, M. 2004 Intraband relaxation via polaron decay in InAs self-assembled quantum dots. Physical review. B, Condensed matter and materials physics, 70(16): 1-4
Carder, D.A.; Wilson, L.R.; Green, R.P.; Cockburn, J.W.; Hopkinson, M.; Steer, M.J.; Airey, R.; Hill, G. 2003 Room-temperature operation of an InAs-GaAs-AlAs quantum-cascade laser. Applied physics letters, 82(20): 3409-3411
Green, R.P.; Wilson, L.R.; Carder, D.A.; Cockburn, J.W.; Hopkinson, M.; Steer, M.J.; Airey, R.J.; Hill, G. 2002 Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding. Electronics letters, 38(24): 1539-1541
Steer, M.J.; Carder, D.A.; Wilson, L.R.; Cockburn, J.W.; Hopkinson, M.; Chia, C.K.; Airey, R.; Hill, G. 2002 GaAs-based quantum cascade lasers with native oxide-defined current confinement. Electronics letters, 38(2): 75-77
Wilson, L.R.; Carder, D.A.; Cockburn, J.W.; Green, R.P.; Revin, D.G.; Steer, M.J.; Hopkinson, M.; Hill, G.; Airey, R. 2002 Intervalley scattering in GaAs-AlAs quantum cascade lasers. Applied physics letters, 81(8): 1378
Wilson, L.R.; Cockburn, J.W.; Carder, D.A.; Steer, M.J.; Hopkinson, M.; Chia, C.K.; Airey, R.; Hill, G. 2001 lambda = 8.3 micro-m GaAs/AlAs quantum cascade lasers incorporating InAs monolayers. Electronics letters, 37(21): 1292-1293
Wilson, L.R.; Cockburn, J.W.; Steer, M.J.; Carder, D.A.; Skolnick, M.S.; Hopkinson, M.; Hill, G. 2001 Decreasing the emission wavelength of GaAs-AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers. Applied physics letters, 78(4): 413-415
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