Analysis
High-accuracy elemental analysis (hydrogen to uranium) of materials and surfaces from a wide range of sample types.
- Ion Beam Analysis
- Atomic Force Microscopy
- Scanning Electron Microscopy
- Field Emission test system
- Hall Effect measurement
More information
Atomic Force Microscopy
- Used to determine the topography of nanoscale surfaces to 14 µm depth.
- Contact mode.
Scanning Electron Microscopy
- Can image features <1 µm
- Multiple sample holder (no tilting) or single sample with tilting capability
- SEM Au deposition unit
Field Emission Test System
- High vacuum chamber for measuring the field emission (electronic properties) of advanced materials
- Computer controlled data acquisition
Hall Effect
- Four point Hall probe measurement system for measuring the resistivity, carrier concentration, and mobility of semiconductors.
- Up to 20 mm x 20 mm samples
- All semiconductors (n-type & p-type) including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN