Publications

Patents

  • A.Markwitz, “Fabrication of silicon nanowhiskers”, New Zealand patent #, filed January 2003
  • Markwitz, “Fabrication of nanoboulders on silicon surfaces”, New Zealand patent #, filed January 2003
  • John V Kennedy and Andreas Markwitz, “ZINC OXIDE MATERIALS & METHODS FOR THEIR PREPARATION”, New Zealand Patent Application No 542917, 2005-10-14
  • John Kennedy and Andreas Markwitz, “Zinc oxide materials and methods for their preparation”, PCT International patent WO2007/117158 A1.
  • John Kennedy and Andreas Markwitz, “Zinc oxide materials and methods for their preparation”, European Patent EP07747701, Publication number EP2004553, publication date: 24-12-2008.
  • J. Kennedy, J. Futter, V. Fang and A. Markwitz, “Zinc oxide nanostructures”, Provisional Patent filed on 14 April 09. New Zealand patent application No. NZ 576207
  • John Kennedy and Andreas Markwitz, “Zinc oxide materials and methods for their preparation”, Japan Patent application 2009-504143
  • J. Kennedy, J. Futter, V. Fang and A. Markwitz, “Zinc oxide nanostructures”, PCT patent application filed on 14 April 2010 PCT/NZ2010/000068
  • John Kennedy and Andreas Markwitz, “Magnetic nanoclusters” new provisional application filed 28 May 2010

Scientific Publications

2009

  • Bari, M.R.; Blaikie, R.J.; Fang, F.; Markwitz, A. 2009 Conductive atomic force microscopy study of self-assembled silicon nanostructures. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 27(6): 3051-3054
  • Carder, D.A.; Markwitz, A. 2009 Field emission measured from nanostructured germanium and silicon thin films. Applied surface science, 256(4): 1003-1005; doi:10.1016/j.apsusc.2009.05.066
  • Fang, A.; Markwitz, A. 2009 Controlled fabrication of Si nanostructures by high vacuum electron beam annealing. Physica E, 41(10): 1853-1858; doi:10.1016/j.physe.2009.02.024
  • Fang, F.; Futter, R.J.; Markwitz, A.; Kennedy, J.V. 2009 UV and humidity sensing properties of ZnO nanorods prepared by the arc discharge method. Nanotechnology, 20(24): Paper 245502; doi:10.1088/0957-4484/20/24/245502
  • Fang, F.; Markwitz, A. 2009 Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing. Journal of nanoscience and nanotechnology, 9(5): 2950-2955
  • Markwitz, A.; Kennedy, J.V. 2009 Group-IV and V ion implantation into nanomaterials and elemental analysis on the nanometre scale. International journal of nanotechnology, 6(3/4): 369-383
  • Strickland, N.M.; Talantsev, E.F.; Long, N.J.; Xia, J.A.; Searle, S.D.; Kennedy, J.V.; Markwitz, A.; Rupich, M.W.; Li, X.; Sathyamurthy, S. 2009 Flux pinning by discontinuous columnar defects in 74 MeV Ag-irradiated YBa2Cu3O7 coated conductors. Physica C. Superconductivity and its applications, 469(23/24): 2060-2067; doi:10.1016/j.physc.2009.08.009
  • Hueger, E.; Schmidt, H.; Stahn, J.; Braunschweig, B.; Geckle, U.; Bruns, M.; Markwitz, A. 2009 Atomic transport in metastable compounds : case study of self-diffusion in Si-C-N films using neutron reflectometry. Physical review. B, 80: 220101 (R)
  • Lim, K.P.; Pham, H.T.; Yoon, S.F.; Markwitz, A.; Yakovlev, N. 2009 Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy. Physica status solidi RRL, 3(7/8): 263-265; doi:10.1002/pssr.200903229

2008

  • Fielitz, P.; Borchardt, G.; Ganschow, S.; Bertram, R.; Markwitz, A. 2008 26Al tracer diffusion in titanium doped single crystalline alpha-Al2O3. Solid state ionics, 179(11/12): 373-379; doi:10.1016/j.ssi.2008.03.007
  • Kennedy, J.V.; Granville, S.; Markwitz, A.; Ruck, B.J.; Trodahl, H.J. 2008 Ion beam analysis of rare earth nitride thin films. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 266(8): 1558-1561; doi: 10.1016/j.nimb.2008.01.052
  • Markwitz, A.; Baumann, H.; Davy, P.K.; Beckert, C.; Kennedy, J.V. 2008 Sub-surface retention of Pb atoms in silicon after low-energy ion implantation and electron beam annealing. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 266(8): 1553-1557; doi: 10.1016/j.nimb.2008.01.044
  • Markwitz, A.; Baumann, H.; Davy, P.K.; Johnson, P.B. 2008 Diffusion of Pb in carbon ion-implanted silicon : discovery of a new crystalline phase after electron beam annealing. Vacuum, 82(11): 1306-1311; doi: 10.1016/j.vacuum.2008.02.006
  • Markwitz, A.; Davy, P.K.; Kennedy, J.V.; Baumann, H. 2008 Nanostructuring at the surface of low-energy lead-implanted silicon by electron beam annealing. Surface and interface analysis, 40(5): 931-934; doi: 10.1002/sia.2805

2007

  • Durbin, S.M.; Anderson, P.A.; Markwitz, A.; Kennedy, J.V. 2007 Oxygen uptake of InN thin films as determined by ion beam analysis. Thin solid films, 515(7/8): 3736-3739
  • Johnson, S.; Zuelicke, U.; Markwitz, A. 2007 Universal characteristics of resonant-tunneling field emission from nanostructured surfaces. Journal of applied physics, 101(12): Article no. 123712
  • Kennedy, J.V.; Markwitz, A.; Trodahl, H.J.; Ruck, B.J.; Durbin, S.M.; Gao, W. 2007 Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films. Journal of electronic materials, 36(4): 472-482
  • Markwitz, A.; Barry, B.J.; Eichhorn, F. 2007 X-ray diffraction study of low-energy carbon-ion implanted Si(001). Surface and interface analysis, 39(5): 415-418; doi: 10.1002/sia.2537
  • Markwitz, A.; Johnson, S.; Rudolphi, M.; Finet, V.; Kennedy, J.V.; Barry, B.J.; Trompetter, W.J. 2007 Deuteron microprobe analysis of carbon in the transition region between SiC and Si nanostructures grown on Si. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 260(1): 325-328; doi:10.1016/j.nimb.2007.02.042
  • Rudolphi, M.; Markwitz, A.; Baumann, H. 2007 Surface cavities produced by high-dose nitrogen ion implantation into silicon. Surface and interface analysis, 39(8): 698-701
  • Strickland, N.M.; Long, N.J.; Xia, J.; Kennedy, J.V.; Markwitz, A.; Zondervan, A.; Rupich, M.W.; Zhang, W.; Li, X.; Kodenkandath, T.; Huang, Y. 2007 Enhanced flux pinning in MOD second generation HTS wires by silver- and copper-ion irradiation. IEEE transactions on applied superconductivity, 17(2): 3306-3309

2006

  • Anderson, P.A.; Kendrick, C.E.; Kinsey, R.J.; Kennedy, J.V.; Markwitz, A.; Reeves, R.J.; Durbin, S.M. 2006 Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy. Smart materials and structures, 15: S87-S91
  • Granville, S.; Budde, F.; Ruck, B.J.; Trodahl, H.J.; Williams, G.V.M.; Bittar, A.; Ryan, M.; Kennedy, J.V.; Markwitz, A.; Metson, J.B.; Prince, K.E.; Cairney, J.M.; Ridgway, M.C. 2006 Single phase nanocrystalline GaMnN thin films with high Mn content. Journal of applied physics, 100: 084310; doi:10.1063/1.2357701
  • Johnson, P.B.; Kennedy, J.V.; Markwitz, A. 2006 Atom ingress from synthetic body fluid into nanoporous layers formed in titanium by helium ion-implantation. Current applied physics, 6(3): 327-330
  • Johnson, S.; Markwitz, A.; Rudolphi, M.; Baumann, H.; Oei, S.P.; Teo, K.B.K.; Milne, W.I. 2006 Field emission properties of self-assembled silicon nanostructures formed by electron beam annealing. Current applied physics, 6(3): 503-506; doi:10.1016/j.cap.2005.11.049
  • Kennedy, J.V.; Markwitz, A.; Li, Z.; Gao, W. 2006 Characterization of ZnO films by ion beam analysis. International journal of modern physics B, 20(25-27): 4655-4660; doi:10.1142/S0217979206041847
  • Kennedy, J.V.; Markwitz, A.; Li, Z.; Gao, W.; Kendrick, C.; Durbin, S.; Reeves, R. 2006 Modification of electrical conductivity in RF magnetron sputtered ZnO films by low-energy hydrogen ion implantation. Current applied physics, 6(3): 495-498
  • Markwitz, A.; Johnson, S.; Kennedy, J.V.; Rudolphi, M.; Baumann, H. 2006 Formation of large SiC nanocrystals on Si(100) by 12C implantation and electron beam annealing. Current applied physics, 6(3): 507-510
  • Markwitz, A.; Johnson, S.; Rudolphi, M. 2006 Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. Applied physics letters, 89: 153122; doi:10.1063/1.2361162

2005

  • A Markwitz , S. Johnson, M. Rudolphi, H. Baumann and A. Mücklich, Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing Appl. Phys. Lett. 86 , 13108 (2005)
  • S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, P. –Y. Kuo, R. Blaikie and A. Mücklich, Effect of crystal orientation on self-assembled silicon nanostructures formed by electron beam annealing J. Appl. Phys, 97 , 94301 (2005)

2004

  • A. Markwitz, V. J. Kennedy, S. Johnson, W. J. Trompetter, M. Rudolphi and H. Baumann, Nuclear reaction analysis of low energy 13 C implanted and subsequently electron beam annealed (100) silicon , Nucl. Instrum. Meth B. 217 , 583 (2004)
  • S. Johnson, A. Markwitz, M. Rudolphi, H. Baumann, S. P. Oei, K. B. K. Teo, and W. I. Milne, Field emission properties of self-assembled silicon nanostructures on n- and p-type silicon , Appl. Phys. Lett. 85 , 3277 (2004)
  • S. Johnson, A. Markwitz, M. Rudolphi and H. Baumann, Nanostructuring of silicon (100) using electron beam rapid thermal annealing, J. Appl. Phys. 96 , 605 (2004)

2003

  • V.A. Christie, S.I. Liem, R. Reeves, V.J. Kennedy, A. Markwitz and S.M. Durbin, “Characterization of polycrystalline gallium nitride grown by plasma-assisted evaporation”, AMN-1 The MacDiarmid Institute for Advanced Materials and Nanotechnology, 9-13 February 2003, Wellington, New Zealand

2002

  • A.Markwitz, M. Waldschmidt, K. Short and W. Matz, “Surface structuring and phase formation in thin metallic layers deposited at various temperatures”, Surface and Interface Analysis1 (2002) 1
  • V.J. Kennedy, A. Markwitz, G.V. White and I.W.M. Brown, “Probing for fluorine in nitrided SiO2 films using ion beam analysis”, Modern Physics Letters B15 (2002) 1332
  • G.L. Moretto, A. Markwitz, S.B. Hall, A.K. Burrell, D.L. Officer, “The Nucleation and Growth, and Characterisation of Conducting Polymers”, Modern Physics Letters B15 (2002) 1411
  • W.J. Trompetter, A. Markwitz and M. Hyland, “Role of oxides in high velocity thermal spray coatings”, Nuclear Instruments and Methods B190 (2002) 518

2001

  • A.Markwitz, G.V. White, W.J. Trompetter, I.W.M. Brown, N. Dytleswki and D. Cohen, “Discovery of highly reactive regions at the surface of thin SiO2 films during high-temperature nitridation experiments”, Microchimica Acta 137 (2001) 49
  • A.Bittar, H.J. Trodahl, N.T. Kemp and A. Markwitz, “Ion assisted deposition of amorphous GaN: Raman and optical properties”, Applied Physics Letters 78 (2001) 619
  • Markwitz and G.V. White, “Nitridation of ultra thin silicon oxide (SiO2) layers with ion beam analysis on the nanometer scale”, Advanced Materials 13 (2001) 1027
  • Markwitz, “Overstoichiometric Nitrogen Implantations into Silicon – Formation of nanobubbles vs. nanowhiskers”, Journal of Nanoscience and Nanotechnology 1 (2001) 393